Mex-Wcalc: ic_microstrip

Mex-Wcalc: ic_microstrip_calc

ic_microstrip_calc - Integrated circuit microstrip transmission line analysis

SYNOPSIS

[z0, keff, elen, loss, L, R, C, G] = ic_microstrip_calc(w, l, tox, h, er, sigmas, tmet, rho, rough, f)

PARAMETERS

INPUT PARAMETERS

w : width of ic_microstrip line (meters)
l : lentgh of ic_microstrip line (meters)
tox : oxide thickness (meters)
h : substrate thickness (meters)
er : substrate relative permitivity
sigmas : substrate conductivity (1/ohm-m)
tmet : metal thickness (meters)
rho : resistivity of wire (relative to copper)
rough : conductor surface roughness (meters-rms)
f : synthesis frequency (Hz)

OUTPUT VALUES

z0 : calculated characteristic impedance (Ohms)
keff : calculated effective relative permitivitty
elen : calculated electrical length of the line (degrees)
loss : calculated loss of the line (dB)
L : calculated inductance per length (Henries/meter)
R : calculated resistance per length (Ohms/meter)
C : calculated capacitance per length (Farads/meter)
G : calculated conductance per length (Siemens/meter)

DESCRIPTION

Function to analyze the electrical characteristics of a single integrated circuit microstrip transmission line. The physical dimensions of the microstrip line are given as inputs and the characteristic impedance, effective dielectric constant, loss and open circuit end correction are calculated.


                 |<--W-->|
                  _______    
                 | metal | <- tmet,rho,rough
    ----------------------------------------------
   {**************  Oxide (tox,eox) **************
    ----------------------------------------------
   (  substrate                          /|\     (
    )   es,sigmas                     H   |       )
   (                                     \|/     (
    ----------------------------------------------
    XXXXXXXXXXXXXXXXXX ground XXXXXXXXXXXXXXXXXXXX

EXAMPLE

 % width
w=150e-6;
 % substrate height
h=250e-6;
 % length
l=1000e-6;
 % substrate permitivitty
es=11.8;
 % substrate conductivity
sigmas=0.5;
 % oxide thickness
tox=1.5e-6;
 % oxide permitivitty
eox=4;
 % metal thickenss
tmet=0.8e-6;
 % metal resitivity
rho=3.0e-8;
 % metal surface roughness
rough=0.0;
 % frequency
f=2.4e9;
[z0,keff,elen,loss,L,R,C,G] = ...
  ic_microstrip_calc(w,l,tox,eox,h,es,sigmas,tmet,rho,rough,f);
disp(sprintf('z0 = %8.4g + j %8.4g Ohms', real(z0), imag(z0) ));
disp(sprintf('keff = %8.4g ',keff));
disp(sprintf('elen = %8.4g degrees',elen));
disp(sprintf('loss = %8.4g dB',loss));
disp(sprintf('L  = %8.4g nH/mm', L*1e6));
disp(sprintf('R  = %8.4g Ohm/mm', R*1e-3));
disp(sprintf('C  = %8.4g fF/mm', C*1e12));
disp(sprintf('G  = %8.4g uMho/mm', G*1e3));